CHI TIẾT BÀI BÁO
Modeling of planar carbon nanotube field effect transistor and three dimensional simulation of current-voltage characteristics
Tác giả: Thi Trần Anh Tuấn(2) Dinh Sy Hien(1) Dinh Viet Nga(3) Nguyen Thi Luong(4) ,
(1) Chủ biên
Abstract: We provide a CNTFET model with planar geometry. Planar CNTFETs constitute the majority of devices fabricated to date, mostly due to their relative simplicity and moderate compatibility with existing manufacturing technologies. We explore the possibilities of using non-equilibrium Green function method to get IV characteristics for CNTFETs. This simulator also includes a graphic user interface (GUI) of Matlab that enables parameter entry, calculation control, intuitive display of calculation results, and in-situ data analysis methods. In this paper, we review the capabilities of simulator, and give examples of typical CNTFET 3D simulations. The IV characteristics of CNTFET are also presented.
(ISSN:) Số 187
Xuất bản: 8/2009
Trang: 012049
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