CHI TIẾT BÀI BÁO
3D simulation of coaxial carbon nanotube field effect transistor
Tác giả: Thi Trần Anh Tuấn(2) Dinh Sy Hien(1) Dinh Viet Nga(4) Nguyen Thi Luong(3) ,
(1) Chủ biên
Abstract: We provide a model of coaxial CNTFET geometry. Coaxial devices are of special interest because their geometry allows for better electrostatics. We explore the possibilities of using non-equilibrium Green's function method to get IV characteristics for CNTFETs. This simulator also includes a graphic user interface (GUI) of Matlab. We review the capabilities of the simulator, and give examples of typical CNTFET's 3D simulations (current-voltage characteristics are a function of parameters such as the length of CNTFET, gate thickness and temperature). The obtained IV characteristics of the CNTFET are also presented by analytical equations.
(ISSN:) Số 187
Xuất bản: 8/2009
Trang: 012061
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