CHI TIẾT BÀI BÁO
Effect of Temperature Dependence on Electrical Characterization of pn GaN Diode Fabricated by RF Magnetron Sputtering
Tác giả: Thi Trần Anh Tuấn(1) Kuo Dong-Hau(2) Cheng Che-Li(3) Li Guan-Zhang(4) ,
(1) Chủ biên
Abstract: The p-n junction GaN diodes were all fabricated by sputtering technique with cermet targets for p- and n-type GaN and metal targets for electrodes. The interface of these p-n junction GaN diodes examined by high-resolution transition electron microscopy was clear and distinguishable. Lattice images identified the complete dissolution of Mg into the Ga site. At the room temperature, the diode had the turn-on voltage of 2.2 V, the leakage current of 2.2 ´ 10−7 A, the breakdown voltage of −6 V, the barrier height of 0.56 eV, ideality factor of 5.0 by I (current)-V (voltage) test and 5.2 derived from the Cheungs’ method, and series resistance of 560 Ω. These electrical properties were investigated at different testing temperatures from room temperature to 200˚C. The temperature dependence in the I-V characteristics of the p-n diodes can be successfully explained on the basis of thermionic-emission mode.
(ISSN:) Số 06
Xuất bản: 9/2015
Trang: 809-812
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